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Showing 1 to 2 of 2 for “"BVCEO"”.
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Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors
… DHBT, while maintaining a high breakdown voltage BVCEO ∼ 4V. The cutoff frequency---breakdown voltage product, fT·BVCEO, of over 2000 GHz-V, is the record value for DHBTs of any material system. Incorporating graded InAs-InGaAs emitter contact layer is also shown to effectively reduce …
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown …