Analysis and design of low-noise amplifiers in silicon-germanium hetrojunction bipolar technology for radar and communication systems

This thesis presents an overview of the simulation, design, and measurement of state-of-the-art Silicon-Germanium Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In Chapter 1, we review the importance of LNAs and the benefits of SiGe HBT technology in high frequency amplifier design. Chapter 2 introduces LNA design and basic noise theory. A graphical LNA design approach is presented to aid in understanding of the high-frequency LNA design process. Chapter 3 presents an LNA design optimization method for power constrained applications. Measured results using this design technique are highlighted and shown to have record performance. Lastly, in Chapter 4, we highlight cryogenic noise performance and present measured results from cryogenic operation of SiGe HBT LNAs. We demonstrate in this thesis that SiGe HBT LNAs have the capability to meet the demanding needs for next generation wireless systems. The aim of the analysis presented herein is to provide designers with the fundamentals of designing SiGe HBT LNAs through relevant design examples and measured results.

Department dc:contributor.department

Electrical and Computer Engineering

Grantor dc:publisher

Georgia Institute of Technology

Year dc:date.issued

2007

Author dc:creator

• Thrivikraman, Tushar

Advisor dc:contributor.advisor

• Cressler, John D.

Committee members dc:contributor.committeemember

• Laskar, Joy
• Papapolymerou, John

• Low noise amplifier
• LNA
• Silicon-germanium
• SiGe
• Hetrojunction bipolar technology
• HBT
• Radio- frequency integrated circuit
• RFIC

Handle dc:identifier.uri

http://hdl.handle.net/1853/19755

OAI identifier oai:identifier

oai:repository.gatech.edu:1853/19755