Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 86 for “"Silicon-germanium"”.
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Thermoelectric properties of silicon-germanium alloys
Direct energy conversion from thermal to electrical energy, based on thermoelectric effects, is attractive for potential applications in waste heat recovery and environmentally friendly refrigeration. The energy conversion efficiency of thermoelectric devices is related to the thermoelectric figure …
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Silicon-germanium nanowire heterojunctions: Optical and electrical properties
Semiconductor nanowires are quasi-one-dimensional objects with unique physical properties and strong potential in nanophotonics, nanoelectronics, biosensing, and solar cell devices. The next challenge in the development of nanowire functional structures is the nanowire axial heterojunctions, …
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n-type silicon-germanium based terahertz quantum cascade lasers
… THz QCLs use III–V compound semiconductors, but silicon (Si)-based devices could offer significant benefits. The high thermal conductivity of Si may allow higher operating temperatures, removing the need for large and costly cryogenic coolers, and the non-polar nature of Si may allow a wider …
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Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001)
Over the last decade, much progress has been made in understanding the thermodynamic and kinetic properties of self-assembled quantum dot structures. These structures form as a result of the strain energy in mismatched epitaxial systems. Ge/Si(001) has been investigated for its potential importance …
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Single crystal growth and characterization of silicon germanium alloys
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
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A 77GHz power amplifier in silicon germanium BiCMOS technology
… concealed weapons detection. Recent advances in silicon processes offer a new means of implementing cost-effective millimeter-wave integrated circuits, a field previously dominated by III-V semiconductors. By moving towards silicon, millimeter-wave circuits can achieve new levels of integration …
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Design and Reliability of mm-Wave Circuits In Silicon-Germanium
… for the design of RF and mm-Wave circuits in Silicon-Germanium utilizing CMOS, PIN diodes, and passive circuits. Such circuits consist of a 2-20 GHz CMOS-based TR (Transmit/Receive) SPDT switch and an 18-47 GHz Wilkinson Power Divider-Combiner (WPDC). Optimal design techniques are utilized in …
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Fabricating silicon germanium waveguides by low pressure chemical vapor deposition
… of light transmission and the economics of silicon substrates have been made possible by Low Pressure Chemical Vapor Deposition (LPCVD). This work explores the fabrication, modeling, and testing of LPCVD Si Ge waveguides. Thesis research was conducted during a six-month internship at Applied …
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Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
As complementary metal-oxide-semiconductor field-effect transistors (MOSFETs) scale, strained Si and SiGe technology have received more attention as a means of enhancing performance via improved carrier mobility. One of the biggest challenges for strained Si and SiGe technology is Si-Ge …
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Germanium-rich silicon-germanium materials for field-effect modular application
… capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as well as low power consumption, key requirements for integrated modulator applications. This thesis presents a study of the Franz-Keldysh effect in …
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A Silicon Germanium CMOS Linear Voltage Regulator for Wireless Agricultural Applications
… the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to …
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Reactions of thin film bilayers of nickel on silicon-germanium alloys
Solid state reactions between 1000A thick Nickel films and 4000A thick amorphous Si$\sb{\rm 1-x}$Ge$\sb{\rm x}$ films, deposited with the Molecular Beam Epitaxy (MBE) technique, are examined with the novel use of two in-situ analytical techniques: An in-situ 4-point probe resistance measurement, …
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Deposition and characterization of silicon-germanium alloy thin films on oxide
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1995.
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A 5-6 Ghz Silicon-Germanium Vco With Tunable Polyphase Outputs
… and characterization of a monolithic 5-6 GHz Silicon Germanium (SiGe) inductor-capacitor (LC) tank voltage controlled oscillator (VCO) with tunable polyphase outputs. Circuits were designed and fabricated using the Motorola 0.4 ìm CDR1 SiGe BiCMOS process, which has four interconnect metal …
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Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.
… of this thesis is to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the SiGe chip using liquid crystal polymer (LCP) is presented and methodology to derive the model for the package is discussed. …
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Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments
Extreme environments pose unique challenges to all types of electronics. These extreme environments can cover a variety of different conditions, including, but not limited to, low temperatures, high temperatures, radiation, pressure etc. One technology that has shown promising robustness in extreme …
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Silicon Germanium SRAM and ROM Designs for Wide Temperature Range Space Applications
<p>This thesis presents a design flow from specifications and feature requirements to embeddable blocks of SRAM and ROM designs from 64 bytes to 1 kilobyte that are suitable for lunar environments. The design uses the IBM SiGe 5AM BiCMOS 0.5 micron process for a synchronous memory system capable of …
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Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications
In this work, the fabrication and characteristics of p-type and n-type MODFETs on a relaxed-SiGe buffer was investigated. Record-performance was achieved for the p-type MODFETs. The fabrication of enhancement-mode n-type MODFETs with three different capping layer configurations was also …
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Vertical profile engineering and reliability study of silicon-germanium heterojunction bipolar transistors
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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