Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 158 for “"SiGe"”.
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Selective SiGe nanostructures
Selective epitaxial growth (SEG) of SiGe on patterned SiO2/Si substrates by ultra-high vacuum chemical vapor deposition (UHVCVD) shows promise for the fabrication of novel SiGe microelectronic structures. This work explores selective growth conditions in the SiH2Cl2/SiH4/GeH4/H2 system between …
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Optical properties of SiGe nanostructures
… indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe …
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Epitaxial SiGe synapses for neuromorphic arrays
… developed single-crystalline Silicon-Germanium (SiGe) artificial synapses that have suitable properties for large-scale neurormorphic arrays. In contrast to amorphous films, epitaxially-grown SiGe can confine metal filaments within widened threading dislocations for uniform conductance update …
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Metallic thin film on SiGe/Si substrates
In this thesis, in-situ XPS and ex-situ AFM have been employed to probe the thermal stability of Si0.8Ge0.2(001) virtual substrate (VS), the interfacial reaction and growth mode of Ni thin film on Si0.8Ge0.2 VS at room temperature (RT), and the germanosilicide phase transformation at high …
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Technology for SiGe heterostructure-based CMOS devices
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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ESD Protected SiGe HBT RFIC Power Amplifiers
… designed in a commercially available 0.5 ìm SiGe-HBT process. The partially protected WLAN PA was fabricated and packaged in a 3mm x 3mm Fine Pitch Quad Flat Package FQFP-N 12 Lead package and had a measured ESD protection rating of ± 1kV standard Human Body Model (HBM) ESD test. The …
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SiGe BiCMOS integrated circuits for optical communication transmitters
… use of advanced manufacturing processes in SiGe BiCMOS technology. In the first part, the capability of a silicon photonics platform for the implementation of driver and Mach-Zehnder modulator (MZM) is investigated. With the aim to implement a high-speed solution using this platform, a …
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Modeling analysis of core-shell Si/SiGe nanowires
… transport properties for a Si/SiGe core-shell nanowire are compared with the related properties for a Si nanowire and a SiGe nanowire. The Si/SiGe core-shell nanowire shows a better thermoelectric performance than its Si nanowire counterpart. On the other hand, by relaxing the …
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SiGe electro-absorption modulators for applications at 1550nm
A novel SixGe₁-x, electro-absorption modulator design is experimentally demonstrated. The device is waveguide integrated, butt-coupled into high index contrast Si/SiO2 waveguides. 0.75% Silicon concentration in the alloy is optimized for 1550nm applications. With its 400nm height, 600nm width, and …
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Optical properties of strain-engineered multilayer Si/SiGe nanostructures
… light-emitting devices and lasers. Multilayer Si/SiGe nanostructures are considered to be the strong candidates for efficient and high-speed optoelectronic devices integrated into CMOS platforms. Since c-Si and Ge have a considerable lattice mismatch of ~ 4.2%, Si/Si_{1-x}Ge_x(x < 0.5) …
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Limited-area growth of Ge and SiGe on Si
… density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential …
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Modeling and characterization of thermoelectric properties of SiGe nanocomposites
… of nano sized powders. In this thesis, SiGe nanocomposites are investigated for power generation at high temperature. The material properties are characterized at different temperatures, and the optimized process conditions are explored experimentally. In addition, theoretical studies …
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Reliability of SiGe HBTs for extreme environment and RF applications
… the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments. The degradation of SiGe HBTs due to mixed-mode DC and RF stress has been modeled for the first time. State-of-the-art 200 GHz SiGe HBTs …
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Plasma induced damage to Si and SiGe devices and materials
… contact layer. The C-V profiling techniques on SiGe MOS structures were used to investigate the change of valence band discontinuity ([Delta]Ev) at the Si/SiGe interface before and after plasma exposure and high temperature annealing. Wet and plasma etched samples were annealed at 500, 600, 700 …
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Dislocation engineering in InAlGaAs/SiGe alloy systems for heteroepitaxial integration
Semiconductor devices based on GaAs substrates use III-V alloy systems like Inx(AlyGa₁₋y)₁₋xAs for optoelectronic devices and high frequency communication applications. Heteroepitaxial integration of such devices with Si has generated a lot of interest because it has the potential of combining the …
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First-principles study of phonon drag effect in SiGe alloys
Thermoelectric materials with large figures of merit zT ([mathematical equation], where S, T, [sigma], K are the Seebeck coefficient, absolute temperature, electrical conductivity and thermal conductivity) are promising candidate materials for efficient solid-state devices for electricity …
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Investigation of lateral gated quantum devices in Si/SiGe heterostructures
Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state qubits. The initial approach towards creating controllable Si/SiGe quantum …
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