Selective SiGe nanostructures

Selective epitaxial growth (SEG) of SiGe on patterned SiO2/Si substrates by ultra-high vacuum chemical vapor deposition (UHVCVD) shows promise for the fabrication of novel SiGe microelectronic structures. This work explores selective growth conditions in the SiH2Cl2/SiH4/GeH4/H2 system between 650-850⁰C, without the addition of C12 or HC1, on substrates patterned by both conventional and interferometric lithography. We have achieved several important milestones for the fabrication of vertical MOSFETs by selective growth in 100 nm SiO2 features patterned by interferometric lithography. We have observed excellent selectivity to SiO2 masks with SiH2C12 at 750⁰C, perfect epitaxial Si filling of SiO2 features, the facet morphology during growth, and the effects of n-type doping on selective growth. We have also fabricated extremely sharp p-n diode doping profiles. With the above accomplishments we have demonstrated the feasibility of vertical MOSFET fabrication through selective epitaxial growth. To realize the advantages of advanced MOSFET designs on silicon-on-insulator (SOI) substrates, we have developed a facet-free raised source/drain process utilizing moderate n-type doping of Si selective growth and <110>-oriented vertical SiO2 sidewalls. However, to improve SiO2 spacer dimension fidelity and eliminate Si substrate overetching, a novel SiO2/Si3N4 spacer process was developed. The keys to the SiO2/Si3N4 spacer process are removal of the Si3N4 layer prior to growth and increased Si ELO growth by moderate in situ n-type doping. This process has wide ranging application to both SOI and bulk Si technologies for fabrication of low-resistance contacts in advanced devices.

Department dc:contributor.department

Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2001

Author dc:creator

• Langdo, Thomas Andrew, 1974-

Advisor dc:contributor.advisor

• Eugene A. Fitzgerald.

• Materials Science and Engineering.

Statement dc:rights

• M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

http://hdl.handle.net/1721.1/8450

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/8450