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Showing 1 to 20 of 29 for “"interface engineering"”.

  1. Nonplanar Nanofabrication via Interface Engineering

    … to nonplanar designs. We achieve this by engineering interface forces through a patterned molecular monolayer to enable controlled delamination of a deposited thin-film in predetermined locations. This allows us to form nonplanar structures with thicknesses < 10 nm and nanogaps reaching < …

    mit Repository record for Nonplanar Nanofabrication via Interface Engineering (opens in a new tab)

  2. INTERFACE ENGINEERING OF 2D MATERIAL NANODEVICES

    … to extrinsic factors arising from surface and interface in the device configuration. In this thesis, by adopting crested substrates, high-performance transition metal dichalcogenides (TMDCs) based field effect transistors (FET) have been successfully achieved at room temperature, with two order …

    nus Repository record for INTERFACE ENGINEERING OF 2D MATERIAL NANODEVICES (opens in a new tab)

  3. Interface Engineering and Substrate Design for Anode-free Lithium Metal Batteries

    … of lithium on two-dimensional material interfaces and underscores the iii critical role of electrolyte composition in determining the interfacial behaviour of 2D materials in lithium metal batteries. Building on this, I further investigate defect engineering in graphene for anode-free …

    cambridge Repository record for Interface Engineering and Substrate Design for Anode-free Lithium Metal Batteries (opens in a new tab)

  4. Interface engineering for exfoliation and integration of heteroepitaxial III-V films

    Compound semiconductors composed of III-V alloys play an essential role in modern optoelectronics and high frequency communication due to their superior optical properties and electron mobilities compared to silicon. However, the use of compound semiconductors devices has not seen the same level of …

    mit Repository record for Interface engineering for exfoliation and integration of heteroepitaxial III-V films (opens in a new tab)

  5. Enhancing the Electrical Performance of Organic Field-Effect Transistors Through Interface Engineering

    Recent decades have been witness to a fast transition into an era consumed with technology. A common thread among all electronic applications is the field-effect transistor (FET); a small electrical switch that can control the current flow. The most common material used in FETs today is silicon. …

    wfu Repository record for Enhancing the Electrical Performance of Organic Field-Effect Transistors Through Interface Engineering (opens in a new tab)

  6. Defects and Interface Engineering of SnO2 Based Nanomaterials for High Performance Memory Applications

    … which covered the following aspects: a. Defects engineering: to facilitate multi-level resistance states in metal oxides, defects engineering via cation doping has been investigated. The possibility of forming cationic and ionic defects in SnO2 by doping has been explored through density …

    unsw Repository record for Defects and Interface Engineering of SnO2 Based Nanomaterials for High Performance Memory Applications (opens in a new tab)

  7. Surface and interface engineering in quantum dot and double-heterojunction nanorod light-emitting diodes

    Colloidal quantum dots (QDs) have shown to be a promising class of materials for the next generation displays. State-of-the-art QD-LEDs that utilize CdSe-based spherical core/shell (C/S) QDs as the electroluminescent layer have shown efficiencies and brightness that rival the best organic LEDs. One …

    uiuc Repository record for Surface and interface engineering in quantum dot and double-heterojunction nanorod light-emitting diodes (opens in a new tab)

  8. Behaviour of Perovskite Solar Cells Under Reverse Bias and Interface Engineering for Efficient and Stable Solar Cells

    … the behaviour of PSCs under reverse bias and the interface engineering for efficient and stable PSCs. The results are summarized as follows: (1) An in-situ temperature and current measurement technique was developed. Intriguingly, some hot spots were observed and then quickly disappeared in the …

    aus-cath Repository record for Behaviour of Perovskite Solar Cells Under Reverse Bias and Interface Engineering for Efficient and Stable Solar Cells (opens in a new tab)

  9. Behaviour of Perovskite Solar Cells Under Reverse Bias and Interface Engineering for Efficient and Stable Solar Cells

    … the behaviour of PSCs under reverse bias and the interface engineering for efficient and stable PSCs. The results are summarized as follows: (1) An in-situ temperature and current measurement technique was developed. Intriguingly, some hot spots were observed and then quickly disappeared in the …

    anu Repository record for Behaviour of Perovskite Solar Cells Under Reverse Bias and Interface Engineering for Efficient and Stable Solar Cells (opens in a new tab)

  10. Interface engineering and multi-modal characterization of co-evaporated metal halide perovskite films for efficient perovskite-silicon tandem solar cells

    … strategies for controlled nucleation and buried interface engineering. We first systematically investigate the impact of PbI2, PbCl2, CsI and CsCl seed layers on the morphology, composition, and optoelectronic properties of co-evaporated FA0.8Cs0.2PbI2.7Br0.3 films. While all seed layers reduce …

    tu-berlin Repository record for Interface engineering and multi-modal characterization of co-evaporated metal halide perovskite films for efficient perovskite-silicon tandem solar cells (opens in a new tab)

  11. Device Physics of Organic-Inorganic Hybrid Perovskite Semiconductors

    … electrochemical reactions occurring at the interface between the perovskite and gold metal electrode in perovskite single crystal FETs. By delaminating the electrodes and employing surface analytical techniques, it is revealed that an electrochemical reaction occurs during device operation. …

    cambridge Repository record for Device Physics of Organic-Inorganic Hybrid Perovskite Semiconductors (opens in a new tab)

  12. Elucidating efficiency losses in cuprous oxide (Cu₂O) photovoltaics and identifying strategies for efficiency improvement

    … and high recombination activity. The effects of interface engineering are demonstrated in experiment and simulation. Broader simulations suggest opportunities for future efficiency improvements towards 10%. These include the improvement of bulk properties, the selection of alternative pairing …

    mit Repository record for Elucidating efficiency losses in cuprous oxide (Cu₂O) photovoltaics and identifying strategies for efficiency improvement (opens in a new tab)

  13. Prevention of biofouling in seawater desalination via initiated chemical vapor deposition (iCVD)

    … layer of coating. This thesis focuses on benign interface engineering methods and ultra-thin zwitterionic coating synthesis to bridge this gap in surface modification strategies. The direct application of ultra-thin coatings on commercial membranes with intact membrane performance has been …

    mit Repository record for Prevention of biofouling in seawater desalination via initiated chemical vapor deposition (iCVD) (opens in a new tab)

  14. Organometallic Functionalization of 2D Nanomaterials for Energy and Medical Applications

    … chemistry to engineer nanoscale interfaces while preserving lattice planarity and charge transport properties that are critical for electronic and diagnostic applications. Unlike conventional covalent modification routes that disrupt sp² hybridization and degrade electronic …

    uic

  15. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

    … Band alignments at source/channel heterointerface can be well modulated by carefully controlling the compositions of the InxGa1-xAs or GaAsySb1-y. In particular, this research systematically investigate the development and optimization of low-power TFETs using mixed As/Sb and …

    vt Repository record for Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors (opens in a new tab)

  16. Designing Planar Silicon Solar Cells for Singlet Fission Sensitization

    … a significant challenge that requires careful interface engineering. Prior work showed that Si microwire cells sensitized with tetracene (Tc) and a zinc phthalocyanine (ZnPc) donor layer can boost photocurrent and external quantum efficiency (EQE). Planar devices are simpler to fabricate than …

    mit Repository record for Designing Planar Silicon Solar Cells for Singlet Fission Sensitization (opens in a new tab)

  17. Perovskite interfaces with protective zinc compounds – DFT computation and related experiments

    … This thesis systematically studies the interfaces between perovskite nanocrystals and protective shells made of zinc compounds such as zinc sulfide and zinc phosphate. The results indicate that pure ZnS is unlikely to form stable bonds with the Pb-I terminated perovskite (100) surface at …

    unsw Repository record for Perovskite interfaces with protective zinc compounds – DFT computation and related experiments (opens in a new tab)

  18. Absorption-Dominant Electromagnetic Interference Shielding Polymer Composites and Foams

    … were developed in the absorption layer via interface engineering, which revealed an improved EM energy dissipation capability and satisfactory impedance matching in theoretical results. Moreover, the input impedance of the bilayer CPC systems can be effectively tuned by optimizing the …

    toronto-retro Repository record for Absorption-Dominant Electromagnetic Interference Shielding Polymer Composites and Foams (opens in a new tab)

  19. Structural and thermal properties of graphene - boron nitride superlattice

    Interfaces and their atomic structure play a key role in two–dimensional materials such as the graphene - boron nitride (C-BN) superlattices. C-BN superlattices with regular ordered subdomains of graphene and boron nitride have recently been synthesized and characterized as a potential candidate …

    uiuc Repository record for Structural and thermal properties of graphene - boron nitride superlattice (opens in a new tab)

  20. Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications

    … stack. Further passivation techniques and interface engineering is then pursued on MOS-C's fabricated from (100) and (110) crystallographically oriented epitaxial Ge integrated on AlAs/GaAs material stacks, balancing out effective oxide thickness (EOT) and reduction of oxide and interfacial …

    vt Repository record for Heteroepitaxial Ge on Si via High-Bandgap III-V Buffers for Low-Power Electronic Applications (opens in a new tab)

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