Interface engineering for exfoliation and integration of heteroepitaxial III-V films

Compound semiconductors composed of III-V alloys play an essential role in modern optoelectronics and high frequency communication due to their superior optical properties and electron mobilities compared to silicon. However, the use of compound semiconductors devices has not seen the same level of wide-spread use compared to silicon owed in part to the significant cost of substrates required for processing III-V devices. To encourage the adoption of III-V technology, many strategies have been proposed to enable monolithic integration of III-V devices on Si to be compatible with Si CMOS technology. One approach to alleviate the cost of integrated III-V devices is to design a process that can selectively release the III-V device layer from its substrate for later heterointegration onto Si, while preserving the substrate for continuous reuse.

Name thesis:degree_name

Doctoral

Department dc:contributor.department

Massachusetts Institute of Technology. Department of Mechanical Engineering

Grantor dc:publisher

Massachusetts Institute of Technology

Year dc:date.issued

2020

Author dc:creator

• Kim, Yunjo.

Advisor dc:contributor.advisor

• Jeehwan Kim.

• Mechanical Engineering.

Statement dc:rights

• MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.

Licence dc:rights.uri

• http://dspace.mit.edu/handle/1721.1/7582

Language dc:language.iso

eng

Handle dc:identifier.uri

https://hdl.handle.net/1721.1/127049

OAI identifier oai:identifier

oai:dspace.mit.edu:1721.1/127049