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Showing 1 to 20 of 836 for “"etching"”.
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Koh etching of silicon
In this research, a series of comparative etching experiments on silicon wafers have been carried out using potassium hydroxide (KOH) for different experimental etching conditions for concentration, temperature and time on (100) orientation p-type silicon wafers. Besides the basic etching …
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Etching for quantum-ready surfaces
Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2024-03-01 without embargo terms
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Laser microchemical etching of silicon
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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Anisotropic etching for silicon micromachining
… wafers. One of these processes is anisotropic etching, which utilizes etchants such as KOH and ethylene diamine pyrocatechol (EDP) to fabricate structures from the wafer bulk. This project is a study of the use of KOH to anisotropically etch (lOO)-oriented silicon wafers. The thesis provides a …
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The genesis of English landscape etching
… century the tradition of English landscape etching had faded. Interest in etching had been, primarily, focused on the work of Rembrandt and nineteenth-century printmakers; landscape prints of the seventeenth century were all but forgotten. This dissertation shows that the roots of etching in …
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Photoelectrochemical Wet Etching of Gallium Nitride
… work, the technique of photoelectrochemical wet etching using KOH solutions has been developed for n-type GaN materials. Customized hardware and software have been assembled to carry out the etching. The etching characteristics were characterized over a wide range of process conditions. This work …
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Charging in Aspect Ratio Dependent Etching
… during creation of these features by plasma etching, charge build-up occurs on the sidewalls due to the plasma exposure and it can divert the etch path. The result is that instead of finishing as strictly vertical features, the holes have twists and are therefore defective, as they cannot …
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Dry etching processes for ferroelectric capacitors
Dry etching processes for patterning of ferroelectric thin films using environmental benign etching gases was developed. The PbZr<sub>x</sub>Ti<sub>1-x</sub>O3 (PZT) and RuO<sub>2</sub> films were patterned using CHCIFCF<sub>3</sub> and O<sub>2</sub>. Selective etching between PZT and …
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Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams
Selective, anisotropic etching of silicon nitride (SiN) over Si or SiO2 is vital for fin field-effect transistor (FinFET) fabrication. Anisotropic etching with high selectivity of SiN over Si, and moderate selectivity over SiO2, can be achieved by ion-assisted etching using hydrofluorocarbon gases, …
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Etching of Gallium Arsenide with atomic hydrogen
… used to make in-situ observations of continuous etching of the (100) GaAs surface during exposure to a known concentration of thermalised hydrogen atoms downstream from an H₂ plasma. Etch rates between 3 and 9 nm/min are followed at constant temperature within the range 229 - 360 °C. Increasing …
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Photo-Assisted Etching in Halogen Containing Plasmas
Plasma etching is indispensable in microelectronics manufacturing, due to its ability to precisely pattern feature with lateral dimensions of <10 nm. To advance this capability to etch layers with atomic fidelity, while also achieving ultra-high material selectivity, low ion energies (10s eV) are …
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Characterization of Aluminum Surfaces: Sorption and Etching
… of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor …
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Surface Reaction Mechanisms in Plasma Etching Processes
Surface reactions occurring in fluorocarbon plasmas also influence plasma properties by consuming or generating plasma fluxes. Of particular interest is the effect that surfaces have on CF2 densities, as CF2 is a precursor for polymer formation. These processes were investigated with the integrated …
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Laser-enhanced plasma etching of semiconductor materials
… parallel to the trench line enhances etching at the top of the features, while perpendicular to the trench line increases trench bottom etch rate.
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Multivariate endpoint detection of plasma etching processes
In plasma etching process it is critical to know when the film being etched has cleared to the underlying film, i.e. to detect endpoint, in order to achieve the desired device performance in the resulting integrated circuit. The most highly utilized sensor technology for determining endpoint has …
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Non-perfluorocompound chemistries for dielectric etching applications
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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Chemical vapor etching of GaAs by CH3I
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1994.
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STM Studies of Oxygen Etching of Silicon Surfaces
… force microscopy (AFM) to investigate the oxygen etching behavior of the following silicon surface orientations: (001), (111), (113), (5 5 12) and (112). Most etching was performed at sample temperatures between 650 °C and 800 °C, at pressures of 3.3×10-7 and 1.5×10-7 Torr, and at an exposure of …
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Alternative Orthodontic Bonding Protocol Using Self Etching Primer
The purpose of the current study was to develop a bonding method that can achieve clinically acceptable bond strength values while leaving a minimum amount of adhesive on the tooth surface during the debonding process. One hundred teeth were randomly assigned into groups. Five different enamel …
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Experimental and Theoretical Investigation of Electrochemical Pattern Etching
… steps such as, lithography deposition and etching. The reliability of micro-electronic devices relies mainly on the ability to retain pattern fidelity during etching.
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