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University of Illinois at Urbana-Champaign
Photoelectrochemical Wet Etching of Gallium Nitride
Abstract
dc:descriptionIn this work, the technique of photoelectrochemical wet etching using KOH solutions has been developed for n-type GaN materials. Customized hardware and software have been assembled to carry out the etching. The etching characteristics were characterized over a wide range of process conditions. This work has led to a viable wet etching technology for GaN device fabrication. In addition, the etching technique is useful for material characterization and measuring dislocation densities in n-type GaN thin films.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Youtsey, Christopher Thomas
- Contributors dc:contributor
-
- I. Adesida
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9921759
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/81289