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Showing 1 to 20 of 93 for “"PECVD"”.

  1. Plasma and particles dynamics modeling in PECVD reactors.

    Plasma and particles dynamics modeling in PECVD reactors.

    uic

  2. Design and fabrication of asymmetric nanopores using pulsed PECVD

    … plasma enhanced chemical vapor deposition (PECVD). Pulsed PECVD has been developed as a high throughput alternative to atomic layer deposition (ALD) to deliver self-limiting growth of thin films. The goal of this thesis is to extend the application of pulsed PECVD to fabricate asymmetric …

    colo-mines Repository record for Design and fabrication of asymmetric nanopores using pulsed PECVD (opens in a new tab)

  3. THE USE OF PECVD SILICON OXYNITRIDE THIN-FILMS IN MICROELECTRONICS MANUFACTURING

    … by plasma enhanced chemical vapor deposition (PECVD). Comparing with the conventional method using SiH₄ and N₂O as reactant gases, it provides a much wider range of film compositions that can meet many requirements. In addition, lower concentrations of hydrogen are incorporated into the films. …

    nus Repository record for THE USE OF PECVD SILICON OXYNITRIDE THIN-FILMS IN MICROELECTRONICS MANUFACTURING (opens in a new tab)

  4. Study of surface kinetics in PECVD chamber cleaning using remote plasma source

    The scope of this research work is to characterize the Transformer Coupled Toroidal Plasma (TCTP); to understand gas phase reactions and surface reactions of neutrals in the cleaning chamber by analyzing the concentration of neutrals in downstream cleaning process chamber; and to make a global …

    mit Repository record for Study of surface kinetics in PECVD chamber cleaning using remote plasma source (opens in a new tab)

  5. Low temperature (<150 °C) hydrogenated amorphous silicon grown by PECVD with source gas heating

    … Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the most successful techniques currently in use for the deposition of device quality a-Si:H. However, there is an increasing desire to improve process compatibility with low cost, plastic substrates. This entails trying to reduce …

    de-montfort Repository record for Low temperature (<150 °C) hydrogenated amorphous silicon grown by PECVD with source gas heating (opens in a new tab)

  6. Thin film amorphous silicon cells by inductive PECVD, with a view towards flexible substrates

    … been fabricated using an inductively coupled PECVD reactor in order to investigate how the deposition conditions influenced their properties. Complete cells were deposited onto rigid and flexible substrates, and homogeneous thin films were grown to investigate their optical and electrical …

    soton Repository record for Thin film amorphous silicon cells by inductive PECVD, with a view towards flexible substrates (opens in a new tab)

  7. Feasibility of Ellipsometric Sensor Development for Use During PECVD SiOx Coated Polymer Product Manufacturing

    … as plasma enhanced chemical vapor deposition (PECVD), was interested in the feasibility of an in line measurement system for monitoring the deposited films on various polymer products. This project examined two different coated polymer products, polyethylene terephthalate (PET) beverage …

    calpoly Repository record for Feasibility of Ellipsometric Sensor Development for Use During PECVD SiOx Coated Polymer Product Manufacturing (opens in a new tab)

  8. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated amorphous silicon (a-Si:H) are attractive for use in solar cell modules …

    mit Repository record for Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films (opens in a new tab)

  9. PECVD of silicon and titanium based coatings to enhance the biocompatibility of blood contacting biomedical devices

    … surface characteristics were deposited by PECVD on 316L stainless steel substrates. Polymer-like SiOxCyHz, silica-like SiOx, titanium oxide TiO, and silicon-titanium mixed oxide coatings were deposited by plasma decomposition of organic molecules. An extensive study was done on silicon …

    dcu Repository record for PECVD of silicon and titanium based coatings to enhance the biocompatibility of blood contacting biomedical devices (opens in a new tab)

  10. Study of PECVD Films Containing Flourine and Carbon and Diamond Like Carbon Films for Ultra Low Dielectric Constant Interlayer Dielectric Applications

    Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400C were …

    tdl Repository record for Study of PECVD Films Containing Flourine and Carbon and Diamond Like Carbon Films for Ultra Low Dielectric Constant Interlayer Dielectric Applications (opens in a new tab)

  11. Fabrication and Characterization of Silicon Rich Oxide (SRO) Thin Film Deposited by Plasma Enhanced CVD for Si Quantum Dot

    … Enhanced Chemical Vapor Deposition (MW-PECVD), which has the potential of giving higher film quality for intrinsic Hydrogen involvement and less defects after chemical reactions. The electrical properties were not included in this thesis to directly show the advantages of PECVD materials …

    unsw Repository record for Fabrication and Characterization of Silicon Rich Oxide (SRO) Thin Film Deposited by Plasma Enhanced CVD for Si Quantum Dot (opens in a new tab)

  12. Chemical vapor deposition of polymeric films

    … and plasma enhanced chemical vapor deposition (PECVD) of carbon films with PPN structure using PTCDA as precursor were carried out under different conditions. There is only limited information in literature on the synthesis of PPN films by PECVD process, which may allow deposition at a higher …

    njit Repository record for Chemical vapor deposition of polymeric films (opens in a new tab)

  13. Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices

    … four different matrices have considered: PECVD Si3N4, LPCVD Si3N4, PECVD SiO1.67N0.14 and PECVD SiO1.12N0.37. Size evolution and structural properties of NPs were examined as function of implantation conditions and the host matrix. Ge NPs were formed in plasma enhanced chemical vapour …

    aus-cath Repository record for Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices (opens in a new tab)

  14. Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices

    … four different matrices have considered: PECVD Si3N4, LPCVD Si3N4, PECVD SiO1.67N0.14 and PECVD SiO1.12N0.37. Size evolution and structural properties of NPs were examined as function of implantation conditions and the host matrix. Ge NPs were formed in plasma enhanced chemical vapour …

    anu Repository record for Study the structural properties of Ge nanoparticles formed by ion implantation and thermal annealing in nitride-base dielectric matrices (opens in a new tab)

  15. A study of carbon based materials for energy applications

    … in nano-devices. Among the different techniques, PECVD is a relatively simple and low temperature process. It facilitates the growth of CNTs and graphene on particular sites of the substrate. The objective of this research project was to study the growth of CNTs and graphene using PECVD system and …

    dundee Repository record for A study of carbon based materials for energy applications (opens in a new tab)

  16. Experimente und numerische Modellierung zum Ladungsträgertransport in a-Si:H/c-Si Heterodioden

    … auf kristallinen Wafern unter Verwendung von PECVD (Plasma Enhanced Chemical Vapour Deposition) hergestellt. An diesen Heterodioden wurden Strom-Spannungskennlinien temperaturabhängig gemessen. Der Vergleich mit verschiedenen theoretischen Ladungsträgertransportmodellen deutet auf Tunneln von …

    oldenburg Repository record for Experimente und numerische Modellierung zum Ladungsträgertransport in a-Si:H/c-Si Heterodioden (opens in a new tab)

  17. Advanced materials, process, and designs for silicon photonic integration

    … on SOI single crystalline silicon (c-Si or SOI), PECVD amorphous silicon (a-Si:H, or simplified as a-Si), and PECVD silicon nitride (SiNxHy) based single mode channel waveguides.We have previously identified that sidewall roughness scattering is the dominant loss mechanism for the TE mode in high …

    mit Repository record for Advanced materials, process, and designs for silicon photonic integration (opens in a new tab)

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