Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 15 of 15 for “"Interface traps"”.
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Investigations of the Electric Field Dependencies of the Generation Rates of Oxide and Interface Traps on Silicon
… the electric field dependencies of the oxide and interface trap generation and charging on oxidized silicon film on silicon. The substrate emitter/base junction is forward-biased to independently control the current injected into the gate oxide and the potential drop across the oxide. A threshold …
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Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the …
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A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections
Embargo set by: Seth Robbins for item 69550 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs
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Hysteresis and memory effects in nanocrystal embedded MOS capacitors
… gate stack composition, oxide charge storage and interface traps are studied by making high frequency and quasi-static capacitance voltage and current voltage measurements. High frequency and quasi-static capacitance characteristics reveal hysteresis which is evidence for the memory effect. A …
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Threshold voltage in pentacene field effect transistors with parylene dielectric
… by surface treatments, and (3) the effects of interface traps on threshold voltage and parasitic bulk conductivity. Parylene was found to provide a favorable, hydrophobic interface for pentacene growth, yielding transistors with mobilities > 0.5cm²/Vs at -100V. While the two surface treatments …
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Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
… takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high …
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Alternative gate dielectrics and application in nanocrystal memory
… could be separated and identified from the interface traps provided the memory structure has sufficiently high electric field coupling from the gate applied voltage. A method for calculating the density of nanocrystals based on the G V data was also discussed. Finally, investigation of trap …
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Atomic -Scale Statistical Models of Semiconductor Device *Reliability
… a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic …
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Atomic Scale Statistical Models of Semiconductor Device Degradation
… a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic excitation …
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Tip-based nanolithography and application to molybdenum disulfide devices
… MoS2 transistors by cleaning and smoothing the interfaces with contact mode atomic force microscopy, (iv) demonstrating single-molecule sensing with monolayer MoS2 nanoribbon-nanopore devices. For TBN of polymer nanostructures, this work found nanometer scale capillary-driven flow governs …
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First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown
… the electronic structure at metal/oxide interfaces is studied using first-principle calculations within the framework of Density Functional Theory (DFT) to investigate any possible key signature that would trigger the dielectric breakdown. A classical band alignment method, the Van de …
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Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs
… pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge …
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Cu₂S/ZnCdS thin film heterojunction solar cell studies
… is attributed to electron relaxation from deep traps near the junction. Spectral response with and without bias light were measured for both Cu₂S/CdS and Cu₂S/ZnCdS cells. White and blue bias light enhance the spectral response, while red bias light quenches the response. This is attributed to …
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Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
… in FET technology: high band-offset, low oxide/interface state density and consequently high mobility. However, mobility in transistors with high-κ gate dielectrics is generally lowered compared to their SiO2–based counterparts. Several factors are known to cause mobility degradation in …