Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations

Baert, Bruno

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ULiège - Université de Liège

Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations

dc:creator Baert, Bruno

dc:date2016

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Grantor dc:publisher: ULiège - Université de Liège
Year dc:date: 2016

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Author dc:creator: Baert, Bruno

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Statement dc:rights: open access

info:eu-repo/semantics/openAccess
Licence: http://purl.org/coar/access_right/c_abf2
Language dc:language: en

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Identifier: info:hdl:2268/201505
OAI identifier oai:identifier: oai:orbi.ulg.ac.be:2268/201505

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Harvested from: Université de Liège
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Last updated: 2026-07-24
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Baert, Bruno. Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations. ULiège - Université de Liège, 2016. https://orbi.uliege.be/handle/2268/201505

Impact of electron trap states on the transport properties of GeSn semiconducting heterostructures assessed by electrical characterizations

Degree

Author and committee

Subjects

Rights

Identifiers

Chain of custody

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