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Showing 1 to 14 of 14 for “"GeSn"”.
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Fourier Transform Infrared Spectroscopy for the measurement of GeSn/(Si)GeSn
… the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a …
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GeSn Light-Emitting Devices
… source on Si is still a challenging topic. GeSn based optoelectronic devices have the great potential to overcome this deficiency for several reasons. By adding more fraction of Sn into Ge, GeSn band gap could be reduced. The narrowed band gap could be developed for near to mid infrared …
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GeSn semiconductor for micro-nanoelectronic applications
… study on the electronic properties of the GeSn performed using first principle methods; subsequently the data obtained have been inserted into a TCAD software in order to create and calibrate a library used to simulate electrical devices. It is important to note, that at the beginning of …
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High-Sn-content GeSn Alloy towards Room-temperature Mid Infrared Laser
… for a wide range of applications. Group-IV alloy GeSn has drawn great attentions as a complementary metal–oxide–semiconductor compatible optoelectronic material for Si photonics. The devices based on GeSn alloy could be monolithically integrated into well-established and high-yield Si integrated …
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Si-based Germanium-Tin (GeSn) Emitters for Short-Wave Infrared Optoelectronics
… the Ge1-xSnx advanced structure including SiGeSn/GeSn/SiGeSn single quantum well (QW) and Ge/Ge0.92Sn0.08/Ge double heterostructures (DHS) were studied. The GeSn QW PL emission was scrutinized from 10 to 300 K and the carrier confinement was analyzed through band offset calculations in the QW …
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Germanium and GeSn based Quantum Well Lasers and Nanoscale Multi-gate FETs
… QW laser architecture is possible by utilizing a GeSn QW. This QW laser uses Sn-alloying to form a GeSn active region which is further lattice matched to the waveguide (InGaAs) and the optical confinement layers (InAlAs) around it. This completely lattice-matched laser structure can offer unique …
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Optical and electrical properties of narrow gap germanium-tin alloys with high tin contents for middle and far infrared applications
Germanium-Tin (GeSn) alloys have received considerable attention because of the interesting electronic properties they possess. The offer a potential route to a direct bandgap group IV semiconductor that is isoelectronic with silicon and can be fully integrated into current silicon manufacturing …
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Doping of group IV semiconductor nanowires
… promise as components for novel FET designs. GeSn also shows great potential over Si and Ge due to its direct bandgap allowing for lower energy devices. While most reported syntheses of Ge NWs use gas-based vapour-liquid-solid growths, some research has been reported on solution-based VLS …
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Tunneling Field-Effect Transistors for Low Power Logic: Design, Simulation and Technology Demonstration
… New substrate material germanium-tin (GeSn), which has small bandgap, was explored for TFET application and GeSn p-channel TFETs is realized for the first time. Descent electrical characteristic was achieved.
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Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections
… </p> <p>This dissertation will develop Si-based GeSn photodetectors technology to realize low-cost high-performance focal plane arrays detectors working in the SWIR towards MIR. It began with the development of fabrication process of single element GeSn photoconductor and photodiode, followed by …
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Germanium tin nanowires: synergy at the nanoscale
… promising solution to overcome strain induced in GeSn thin films is the move towards 1-D GeSn nanostructures; nanowire morphology allows for increased strain relaxation compared to thin films due to free sidewall facets. This thesis aims to demonstrate the advancements in Ge1-xSnx nanowires, and …
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Plastic Relaxation of Highly Tensile Strained (100) Ge/InGaAs Heterostructures
… grown on larger lattice constant InGaAs or GeSn have attracted great research interest. However, no previous studies have investigated the plastic relaxation occurring in these and#949t-Ge layers. Here, we experimentally demonstrate that plastic relaxation occurs in nearly all and#949t-Ge …
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Defects and alloying in semiconductors: computational studies of clusters and surfaces
… Alloy nanoclusters, specifically germanium-tin (GeSn) nanoclusters show great promise for achieving higher photoconversion efficiencies since the band gap can be tuned by adjusting the Ge/Sn ratio. To accurately model alloy nanoclusters one must first verify that the physical properties of the …