A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections

Hsu, Charles Ching-Hsiang

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University of Illinois at Urbana-Champaign

A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections

dc:creator Hsu, Charles Ching-Hsiang

thesis:degree_name Ph.D.

dc:date2014

Abstract

dc:description

Embargo set by: Seth Robbins for item 69550 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs

Degree

thesis:*

Name thesis:degree_name: Ph.D.
Level thesis:degree_level: Dissertation
Discipline thesis:degree_discipline: Electrical Engineering
Grantor: University of Illinois at Urbana-Champaign
Year dc:date: 2014

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Hsu, Charles Ching-Hsiang

Subjects

dc:subject × 1

Engineering, Electronics and Electrical

Identifiers

dc:identifier.*

Identifier: (UMI)AAI8815359
OAI identifier oai:identifier: oai:www.ideals.illinois.edu:2142/69384

Chain of custody

source

Harvested from: University of Illinois - Urbana-Champaign
Base URL: www.ideals.illinois.edu/oai-pmh
Last updated: 2026-07-22
Source record: OAI-PMH GetRecord

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citation

Hsu, Charles Ching-Hsiang. A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections. Dissertation thesis, University of Illinois at Urbana-Champaign, 2014. http://hdl.handle.net/2142/69384

A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections

Abstract

Degree

Author and committee

Subjects

Identifiers

Chain of custody

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