Investigations of the Electric Field Dependencies of the Generation Rates of Oxide and Interface Traps on Silicon

A bipolar-MOS transistor (BIMOS) is employed to investigate the electric field dependencies of the oxide and interface trap generation and charging on oxidized silicon film on silicon. The substrate emitter/base junction is forward-biased to independently control the current injected into the gate oxide and the potential drop across the oxide. A threshold kinetic energy and electric field for trap generation in the gate oxide on silicon is observed directly from automated electrical measurements on the BIMOS. The density of the newly generated oxide trap is found to increase exponentially with increasing oxide electric field above 1.5 MV/cm. The trap generation threshold is consistent with the hydrogen bond-breaking model which indicates a threshold kinetic energy of 3-4 eV for trap generation by energetic electron impact. From the subthreshold slope and fractional transconductance change of the I$\sb{\rm D}$-V$\sb{\rm G}$ characteristics stressed at different oxide electric fields, the oxide electric field dependence of the interface trap generation is determined. The measured electric field dependence of the trap generation and charging rates may be applied to the modeling of the reliability of the MOS transistor.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Nishida, Toshikazu

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908790

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69416