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Showing 1 to 20 of 36 for “"Device Simulation"”.

  1. Numerical methods for Monte Carlo device simulation

    Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1992.

    mit Repository record for Numerical methods for Monte Carlo device simulation (opens in a new tab)

  2. Quasi-Newton and Multigrid Methods for Semiconductor Device Simulation

    … difference approximation to the semiconductor device equations using the Bernoulli function approximation to the exponential function is described, and the robustness of this approximation is demonstrated. Sheikh's convergence analysis of Gummel's method and quasi-Newton methods is extended to …

    uiuc Repository record for Quasi-Newton and Multigrid Methods for Semiconductor Device Simulation (opens in a new tab)

  3. MIT Device Simulation WebLab : an online simulator for microelectronic devices

    In the field of microelectronics, a device simulator is an important engineering tool with tremendous educational value. With a device simulator, a student can examine the characteristics of a microelectronic device described by a particular model. This makes it easier to develop an intuition for …

    mit Repository record for MIT Device Simulation WebLab : an online simulator for microelectronic devices (opens in a new tab)

  4. Semiconductor device simulation : a spectral method for solution of the Boltzmann transport equation

    Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.

    mit Repository record for Semiconductor device simulation : a spectral method for solution of the Boltzmann transport equation (opens in a new tab)

  5. Two-Dimensional Analysis of Narrow Gate Effects in Micron and Submicron Mosfets (Device Simulation, Modeling)

    Variations of the device characteristics due to the geometry effects in narrow gate MOSFETs, such as threshold voltage shift and subthreshold characteristics, are important factors in designing next generation MOS-VLSI circuits. It is well known that numerical methods, using the exact 2-D solutions …

    uiuc Repository record for Two-Dimensional Analysis of Narrow Gate Effects in Micron and Submicron Mosfets (Device Simulation, Modeling) (opens in a new tab)

  6. Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain

    The state of the art for full-band Monte Carlo device simulation is advanced on two fronts. First, quantum effects are taken into account by including quantum corrections in the semiclassical Monte Carlo framework. A quantitative study of corrections based on the Wigner transport equation and the …

    uiuc Repository record for Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain (opens in a new tab)

  7. Modeling of gallium nitride transistors for high power and high temperature applications

    … Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full …

    missouri Repository record for Modeling of gallium nitride transistors for high power and high temperature applications (opens in a new tab)

  8. Modeling, Simulation and Design of EOS/ESD Protection Devices and Circuits in Silicon-on-Insulator Technology

    For the first time, a circuit level simulation tool for CMOS-on-SOI ESD protection networks is presented. The simulator, SOI-iETSIM, has built-in device models for completely coupled electrothermal simulation of SOI protection devices operating in the high current regime. The implementation of …

    uiuc Repository record for Modeling, Simulation and Design of EOS/ESD Protection Devices and Circuits in Silicon-on-Insulator Technology (opens in a new tab)

  9. Numerical models for the simulation of nonstationary effects in submicron semiconductor devices

    … energy transport (ET) models for submicron device simulation are constructed and numerically implemented. Analytical derivation of the length coefficient for the ADD models is presented for both single- and multi-valley approximations. Results of typical $n\sp+ - n - n\sp+$ ballistic diodes …

    uiuc Repository record for Numerical models for the simulation of nonstationary effects in submicron semiconductor devices (opens in a new tab)

  10. Generalized drift-diffusion for microscopic thermoelectricity

    … material systems as other micro-electronic devices, the former are described in the language of irreversible thermodynamics while devices such as heterojunction bipolar transistors and semiconductor lasers are often described with the drift-diffusion equations. We present a microscopic …

    mit Repository record for Generalized drift-diffusion for microscopic thermoelectricity (opens in a new tab)

  11. Simulation tools for microelectromechanical systems

    … is incorporated in an efficient coupled domain simulation technique and examples are presented exploring geometry effects on device behavior. Then for system level simulation where full device simulation costs add up we need models with much reduced order with little degradation in accuracy. We …

    mit Repository record for Simulation tools for microelectromechanical systems (opens in a new tab)

  12. Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices

    … MOSFETs and results are compared with continuum simulations in 2D and 3D. The results indicate that classical short-range Coulomb methods such as the P3M-EMC method can match bulk mobilities and kinietic energies predicted by the modified Hartree model. Results predict cooler hot carrier tails …

    uiuc Repository record for Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices (opens in a new tab)

  13. Optically Powered Logic Transistor

    … modeling and fabrication of a new solid-state device meant to be used for digital logic circuits. Most current logic circuits are based on MOSFETs. The new logic device uses some of the same operating principles, but also relies on optical illumination to provide input power. In order to obtain …

    byu Repository record for Optically Powered Logic Transistor (opens in a new tab)

  14. A meta-language for functional verification

    … activities: that of coordinating the search for simulation traces toward reaching verification closure, and that of coordinating the search for a proof within a theorem prover. The programmatic coordination of simulation is difficult with existing tools for digital circuit verification because …

    uiuc Repository record for A meta-language for functional verification (opens in a new tab)

  15. MIT integrated microelectronics device experimentation and simulation iLab

    We developed the MIT Integrated Microelectronics Device Experimentation and Simulation iLab, a new online laboratory that combines and significantly upgrades the capabilities of two existing online microelectronics labs: WebLab, a device characterization lab, and WebLabSim, a device simulation lab. …

    mit Repository record for MIT integrated microelectronics device experimentation and simulation iLab (opens in a new tab)

  16. Development of 3D Silicon radiation detectors for neutrons and high energy charged particles

    … neutron detectors have been pursued. These devices feature high aspect-ratio cavities, filled with neutron converter materials, so as to improve the neutron detection efficiency with respect to coated planar sensors. In the framework of the INFN HYDE (HYbrid Detectors for neutrons) project, …

    trento Repository record for Development of 3D Silicon radiation detectors for neutrons and high energy charged particles (opens in a new tab)

  17. Designing a Simulator for an Electrically-Pumped Organic Laser Diode

    … set of basis materials to fabricate electronic devices like PN Junctions, LEDs, and FETs. These materials have several benefits over traditional inorganic semiconductors including their mechanical flexibility, reliance on renewable resources, and inexpensive large-scale manufacturability. …

    calpoly Repository record for Designing a Simulator for an Electrically-Pumped Organic Laser Diode (opens in a new tab)

  18. DECENTRALIZED CONTROLLERS FOR INTERCONNECTED POWER SYSTEMS

    … are given in detail and the digital computer-simulation of the system under study is described. Two specific approaches to power system stabilizer design, on a linearized-system basis, are presented. The first leads to a centralized controller which depends for its operation on the exchange of …

    sask Repository record for DECENTRALIZED CONTROLLERS FOR INTERCONNECTED POWER SYSTEMS (opens in a new tab)

  19. Modeling, simulation and applications of ionic polymer metal composites

    … of IPMC micropump is in insulin dispenser device. Simulation of micropump with IPMC diaphragm confirms that IPMC micropump can generate sufficient flow rate of insulin required for treatment of Diabetes. Here, we propose a two-dimensional numerical study on the flow induced by an IPMC cilia …

    brazil-uerj Repository record for Modeling, simulation and applications of ionic polymer metal composites (opens in a new tab)

  20. Programmable Current Control of Silicon Field Emitter Arrays Using Gate-All-Around MOSFETs

    … versatility of FEAs. To achieve this, SILVACO, a device simulation platform, was used to model the GAA MOSFET, field emitter, and combined GAA MOSFET-FEA devices. The simulation results provide insight into each device's current-voltage (I-V) characteristics, identifying performance-limiting …

    mit Repository record for Programmable Current Control of Silicon Field Emitter Arrays Using Gate-All-Around MOSFETs (opens in a new tab)

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