Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices

The combined P3M-EMC method is tested for large and short channel-length silicon MOSFETs and results are compared with continuum simulations in 2D and 3D. The results indicate that classical short-range Coulomb methods such as the P3M-EMC method can match bulk mobilities and kinietic energies predicted by the modified Hartree model. Results predict cooler hot carrier tails than do methods that use c-i scattering rates and do not consider c-c interaction. Finally, timing analysis shows that the classical molecular-dynamical methods like the P3M-EMC method can simulate very-small devices with modest additional cost compared to the traditional Monte Carlo device simulation method, and such methods will likely continue to be useful ways to model ultrasmall semiconductor devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Wordelman, Carl John

Contributors dc:contributor

• U. Ravaioli

• Applied Mechanics

Language dc:language

eng

Identifier

(MiAaPQ)AAI9990192

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/81366