Two-Dimensional Analysis of Narrow Gate Effects in Micron and Submicron Mosfets (Device Simulation, Modeling)

Variations of the device characteristics due to the geometry effects in narrow gate MOSFETs, such as threshold voltage shift and subthreshold characteristics, are important factors in designing next generation MOS-VLSI circuits. It is well known that numerical methods, using the exact 2-D solutions of the transport equation and Poisson's equation for studying the geometry effect of small MOSFETs, are more accurate than simple charge-control analysis. The 2-D numerical model of Ji and Sah demonstrated important design features of the threshold voltage of narrow gate MOSFETs. However, studies of MOSFET characteristics using 2-D numerical analysis, which take into account the effects of all the device parameters, such as gate oxide thickness, backgate bias, and substrate doping, are lacking. Particularly, the analysis of the subthreshold characteristic for narrow gate MOSFETs was not reported before.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Chung, Shao-Shiun

• Physics, Electricity and Magnetism

Identifier

(UMI)AAI8600152

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69313