Numerical models for the simulation of nonstationary effects in submicron semiconductor devices

Numerical modeling of nonstationary transport effects using partial differential equations derived from the Boltzmann Transport Equation (BTE) is investigated. Augmented drift-diffusion (ADD) models and improved energy transport (ET) models for submicron device simulation are constructed and numerically implemented. Analytical derivation of the length coefficient for the ADD models is presented for both single- and multi-valley approximations. Results of typical $n\sp+ - n - n\sp+$ ballistic diodes for Si and GaAs are presented. The extension of the ADD model to two dimensions is then formulated, and the implementation problems with the standard box integration method, as used in conventional drift-diffusion (DD) models, are examined.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Kan, Edwin Chihchuan

Contributors dc:contributor

• Ravaioli, Umberto

• Mathematics
• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1992 Kan, Edwin Chihchuan

Language dc:language

eng

Identifier

AAI9215834
(UMI)AAI9215834

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21707