GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates

Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical Engineering

Year dc:date.available

2004

Author dc:creator

• Gu, Xing

Contributors dc:contributor

• Dr. Hadis Morkoc

• ZnO
• substrate
• semiconductor
• epitaxy
• GaN
• Electrical and Computer Engineering
• Engineering

Statement dc:rights

• © The Author

Identifier

https://scholarscompass.vcu.edu/etd/1007

OAI identifier oai:identifier

oai:scholarscompass.vcu.edu:etd-2006