{"id":{"repo_id":"vcu","oai_identifier":"oai:scholarscompass.vcu.edu:etd-2006"},"canonical_url":"https://search.dev.ndltd.org/etd/vcu/oai:scholarscompass.vcu.edu:etd-2006","repository":{"repo_id":"vcu","name":"Virginia Commonwealth University","base_url":"https://scholarscompass.vcu.edu/do/oai/"},"display":{"title":"GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates","abstract":"Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.","abstract_html":"Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.","abstract_has_math":false,"creators":["Gu, Xing"],"institution":null,"degree_name":"Master of Science","degree_level":"Thesis","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Dr. Hadis Morkoc"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2004,"date_issued":"2004-01-01T08:00:00Z","date_published":"2004-01-01T08:00:00Z","updated_at":"2026-07-24T05:54:40Z","subjects":["ZnO","substrate","semiconductor","epitaxy","GaN","Electrical and Computer Engineering","Engineering"],"languages":[],"rights":["© The Author"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarscompass.vcu.edu/etd/1007"],"render_values":[{"text":"https://scholarscompass.vcu.edu/etd/1007","href":"https://scholarscompass.vcu.edu/etd/1007","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25772/84ET-FX38","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Dr. Hadis Morkoc"]},{"key":"dc:creator","label":"Author","values":["Gu, Xing"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2014-07-09T07:00:00Z"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["ZnO","substrate","semiconductor","epitaxy","GaN","Electrical and Computer Engineering","Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["© The Author"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://doi.org/10.25772/84ET-FX38","https://scholarscompass.vcu.edu/etd/1007"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed."]},{"key":"dc:title","label":"Title","values":["GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates"]}]}],"canonical_facts":{"dc:contributor":["Dr. Hadis Morkoc"],"dc:creator":["Gu, Xing"],"dc:date.available":["2014-07-09T07:00:00Z"],"dc:description.abstract":["Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed."],"dc:identifier":["https://doi.org/10.25772/84ET-FX38","https://scholarscompass.vcu.edu/etd/1007"],"dc:rights":["© The Author"],"dc:subject":["ZnO","substrate","semiconductor","epitaxy","GaN","Electrical and Computer Engineering","Engineering"],"dc:title":["GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science"]},"updated_at":"2026-07-24T05:54:40Z"}