Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 652 for “"GaN"”.
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p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because they offer compactness, reduced parasitics, and higher performance compared to discrete transistors or printed circuit board (PCB) integration. The p-GaN platform exhibits tremendous potential in power ICs …
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N-polar n-GaN MOSCAP and Tunnel Junctions Toward p-GaN MOSCAP
… and saturation velocity, gallium nitride (GaN) material has emerged as a key contender in the high-performance semiconductor market, paving the way for the future optoelectronics and high-frequency electronics. The oxide/semiconductor interface quality could significantly impact device …
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Study of Thin GaN/InGaN/GaN double graded structures for Future photovoltaic application
… varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy (MBE). Epitaxial growth of high quality In_x Ga_(1-x) N material, however, creates great challenges due to lattice …
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Graphene-Assisted gan membranes formation /
… enable robots to mimic the touch of living organisms. However, whether intended for humans or robots, these devices present a significant chemical and engineering challenge. This is due to electronic components typically being delicate and rigid. One of the earliest milestones in flexible …
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Modelling of Multichannel GaN Transistors
… Nitride High Electron Mobility Transistor (GaN HEMT) is the representative GaN-based wide bandgap semiconductor device. It has been one of the most promising research topics due to its excellent electronic properties in high power, high frequency and high temperature applications. The …
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GaN-based vertical power devices
Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data …
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InN/GaN heterosandūros formavimas ir tyrimas /
Fabrication and Investigation of InN/GaN Heterojunction.
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Raman Scattering in GaN and ZnO
… technique has been used for the study of GaN and ZnO. Capabilities of the Raman technique and existing literature on Raman spectroscopy in GaN and ZnO are reviewed. About 50 GaN and ZnO samples with a wide range of properties are studied. From the analysis of positions of the E2H and …
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Local Charging Behavior on GaN Surfaces
… and high-frequency devices. The nature of the GaN surface and its electrical characteristics can impact the performance of such devices. In this study, several GaN surfaces are locally charged using an atomic force microscope, and then subsequently studied by measuring the surface potential …
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GaN Electronics for High-Temperature Applications
… offer a strong indication of the potential of GaN transistor technology for HT applications, the development of HT (500 °C) GaN-ICs is still at its early stage due to the low degree of complexity and integration demonstrated so far. Major challenges in the realization of GaN HT-robust …
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GaN electronics for high-temperature applications
… several issues in traditional lateral AlGaN/GaN HEMTs could cause early degradation and failure under high-temperature operation (over 300°C). These include ohmic degradation, gate leakage, buffer leakage, and poor passivation. Besides, enhancement-mode HEMTs are preferred from the …
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Synthesizing tabular data using conditional GAN
… (2) To address these problems, I designed CTGAN, which uses a conditional generative adversarial network to address the challenges in modeling tabular data. Because CTGAN uses reversible data transformations and is trained by re-sampling the data, it can address common challenges in synthetic …
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AlGaN/GaN-based power semiconductor switches
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers …
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GaInN/GaN Schottky Barrier Solar Cells
GaInN has the potential to revolutionize the solar cell industry, enabling higher efficiency solar cells with its wide bandgap range spanning the entire solar spectrum. However, material quality issues stemming from the large lattice mismatch between its binary endpoints and questionable range of …
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Persistente Photoleitfähigkeit indünnen GaN- und AlGaN-Schichten
Galliumnitrid (GaN) wird In den nächsten Jahren Im Bereich optoelektronischer Anwendungen das dominierende Materialsystem für Bauteile wie Leuchtdioden und Halbleiterlaserdioden kurzwelligen (blau bis ultraviolett) sein. Rahmen dieser Arbeit untersuche ich Phänomen der persistenten …
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Innovative GaN Multilevel Inverter For Motorsport Applications
L'abstract è presente nell'allegato / the abstract is in the attachment
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Fabrication and characterization of AIGaN/GaN HEMTs
… and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A …
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A GAN-BASED HUMAN UV COORDINATES ESTIMATION
… via UV coordinates. Then our method uses a GAN model trained to balance the spatial quality and temporal stability. Our experiments show that the trained model generates high-quality UV coordinates in extended clothing, and generalizes to new poses. The inferred UV coordinates sequence can …
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