Study of subthreshold behavior of FinFet

The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices.

Name thesis:degree_name

Master of Science (MS)

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor dc:publisher

University of Nevada, Las Vegas

Year

2003

Author dc:creator

• Murugan, Balasubramanian

Contributors dc:contributor

• Rama Venkat

Statement dc:rights

• IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

Language dc:language

English

Identifier

https://oasis.library.unlv.edu/rtds/1604

OAI identifier oai:identifier

oai:oasis.library.unlv.edu:rtds-2603