{"id":{"repo_id":"unlv","oai_identifier":"oai:oasis.library.unlv.edu:rtds-2603"},"canonical_url":"https://search.dev.ndltd.org/etd/unlv/oai:oasis.library.unlv.edu:rtds-2603","repository":{"repo_id":"unlv","name":"University of Nevada - Las Vegas","base_url":"https://oasis.library.unlv.edu/do/oai/"},"display":{"title":"Study of subthreshold behavior of FinFet","abstract":"The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices.","abstract_html":"The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg &lt; 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices.","abstract_has_math":false,"creators":["Murugan, Balasubramanian"],"institution":"University of Nevada, Las Vegas","degree_name":"Master of Science (MS)","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Rama Venkat"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2003,"date_issued":"2003-01-01T08:00:00Z","date_published":"2003-01-01T08:00:00Z","updated_at":"2026-07-24T05:25:47Z","subjects":[],"languages":["English"],"rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://oasis.library.unlv.edu/rtds/1604"],"render_values":[{"text":"https://oasis.library.unlv.edu/rtds/1604","href":"https://oasis.library.unlv.edu/rtds/1604","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25669/9ip7-6oho","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Rama Venkat"]},{"key":"dc:creator","label":"Author","values":["Murugan, Balasubramanian"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:publisher","label":"Institution","values":["University of Nevada, Las Vegas"]},{"key":"dc:type","label":"Dc Type","values":["Text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science (MS)"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]},{"key":"dc:rights","label":"Dc Rights","values":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["10.25669/9ip7-6oho","https://oasis.library.unlv.edu/rtds/1604","https://oasis.library.unlv.edu/context/rtds/article/2603/viewcontent/uc.pdf"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices."]},{"key":"dc:format","label":"Dc Format","values":["pdf"]},{"key":"dc:title","label":"Title","values":["Study of subthreshold behavior of FinFet"]}]}],"canonical_facts":{"dc:contributor":["Rama Venkat"],"dc:creator":["Murugan, Balasubramanian"],"dc:description.abstract":["The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices."],"dc:format":["pdf"],"dc:identifier":["10.25669/9ip7-6oho","https://oasis.library.unlv.edu/rtds/1604","https://oasis.library.unlv.edu/context/rtds/article/2603/viewcontent/uc.pdf"],"dc:language":["English"],"dc:publisher":["University of Nevada, Las Vegas"],"dc:rights":["IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/"],"dc:title":["Study of subthreshold behavior of FinFet"],"dc:type":["Text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science (MS)"]},"updated_at":"2026-07-24T05:25:47Z"}