A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells

Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique. The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and in films implanted with nitrogen.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Materials Science & Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2016

Author dc:creator

• Erickson, Thomas Glenn

Contributors dc:contributor

• Rockett, Angus Alexander

• Thin Film Photovoltaics
• CuInSe2
• Physical Vapor Deposition
• Electronic Materials

Statement dc:rights

• Copyright 2016 Thomas Erickson

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/92675

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/92675