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Showing 1 to 18 of 18 for “"CuInSe2"”.
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Properties of the CuGaSe2 and CuInSe2 (001) Surface
… Arbeit wird die (001) Oberfläche von CuGaSe2 und CuInSe2 in Abhängigkeit von Präparation und Stöchiometrie untersucht. Die Kenntnis der atomaren Struktur sowie anderer Oberflächeneigenschaften ist wichtig in Hinsicht auf die Optimierung von neuartigen Dünnschichtsolarzellen. Zur Charakterisierung …
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Application of Pulsed D.C. Magnetron sputtering deposition for the component layers of CuInSe2 thin film photovoltaic cells
The Pulsed D.C. Magnetron Sputtering (PDMS) process has been investigated for thedeposition of the component layers that are used in the production of copper indiumdiselenide, CuInSe 2 (CIS), thin film solar cells. PDMS can use high plasma densities withlong term arc free operation for the reactive …
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Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys
… in the chalcopyrite bulk, increase upon alloying CuInSe2 with S. The band alignments within the Cu(In1-xGax)(Se1-ySy)2 system are determined using the energy position of the bulk acceptor state as a reference. The band gap enlargement under Ga alloying is accommodated almost exclusively in the …
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A study of the creation and characterization of nitrogen doped CuInSe2 (CIS:N), as a potential improved back contact material for CdTe and Cu(IN_xGA_1-x)Se2 photovoltaic cells
Nitrogen is incorporated into CuInSe2 (CIS), and other related materials, using a scalable, commonly used, technique. The growth characteristics, film morphology and electronic properties of these N doped materials, as it is affected by nitrogen, are studied, both in films grown with nitrogen, and …
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Optical Modeling of Solar Cells
… in the work are Copper-Indium-Diselenide (CuInSe2) and Copper-Indium-Gallium-Diselenide (CIGS, CuInGaSe2).</p><p> The analysis of CuInSe2 and CuInGaSe2 showed that maximum current is produced when Indium – doped tin oxide (ITO) is used as TCO. The use of ITO as TCO results in highest short …
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Engineering Nanocrystal Devices Through Cation Exchange And Surface Modifications
… exchange process to achieve high-performance CuInSe2 NC FETs and circuits. We start with high-quality CdSe NCs, and exchange Cd2+ with Cu+ and In3+. We integrate the high-quality CuInSe2 NC thin film into FETs and proof-of-concept circuits, by applying surface modifications to introduce fusion …
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Electronic Properties of ALD Zinc Oxide Interfaces and its Implication for Chalcopyrite Absorber Materials
… während des initiellen Wachstums von ALD-ZnO auf CuInSe2 (112) und der Vergleich mit Referenzproben deutet auf die Bildung einer intrinsischen ZnIn2Se4 Grenzschicht hin, welche eine Dicke von nur einer Monolage aufweist. Die Kombination aus XPS und UPS erlaubt die Untersuchung der elektronischen …
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Growth of epitaxial nanoscale columnar copper indium diselinide thin films by introduction of sodium flouride during growth
The effect of NaF on the growth of CuInSe2 (CIS) epitaxial thin films by a hybrid sputtering and evaporation method was studied. Low levels of NaF deposition during interruptions of epitaxial growth reduced surface roughness. Larger amounts of NaF resulted in columnar epitaxial films with <112> …
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Impact of secondary barriers on CuIn1-xGaxSE2 solar-cell operation
Thin-film solar cells based on CuInSe2 (CIS) absorber with a band gap of Eg = 1.0 eV and also based on CuIn1-xGaxSe2 (CIGS) alloy absorbers with a band-gap range of Eg = 1.0 - 1.67 eV are investigated in this work. Intermediate "buffer" semiconductor layers in p-n junctions of CIGS solar cells …
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Solar Driven Photoelectrochemical Water Splitting For Hydrogen Generation Using Multiple Bandgap Tandem Of Cigs2 Pv Cells And Thin Film Photocatalyst
… CIGS2 have been lower than those achieved using CuInSe2 and CuIn1-xGaxSe2. The basic limitation in the efficiencies is attributed to lower open circuit voltages with respect to the bandgap of the material. Presently, the main mechanism used to increase the open circuit voltage of these copper …
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{112} Polar Surfaces of Copper(indium,gallium)selenide: Properties and Effects on Crystal Growth
… at the first 1--2 layer of the free surface of CuInSe2 and the surface is semiconducting. The results strongly support the model of a reconstructed non-stoichiometric polar surface and exclude the previously believed existence of a bulk second phase on the CIS surface. Unique features of the …
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Photoluminescence study of Cu(In,Ga)Se2 and Cu2ZnSnSe4 used for thin film solar cells
… band tails are deeper in CuGaSe2 than in CuInSe2, explaining why an increase in Ga content x > 0.3 does not improve the efficiency of solar cell.;Also band-impurity (BI) transition and donor acceptor pair (DAP) recombination were discovered. For the first time ever excitons in the CIGSe …
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Synthesis of Nanocrystal Quantum Dots with Enhanced Photoluminescence for Luminescent Optoelectronics
… The lead-free quantum dot systems InAs and CuInSe2 were investigated as alternative near-infrared emitters for photon-multiplication. Core-shell approaches with a variety of materials and complex structures were employed to improve their otherwise poor luminescence. The measurement of …
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Incorporating double-heterojunction in anisotropic semiconductor nanocrystals for novel optoelectronic applications
… formation of heterostructures with CuInS2 and CuInSe2 on CuGaS2 nanorods, which has not been reported yet anywhere to the best of our knowledge. Interesting sawtooth structures and branch structures has been analyzed with high resolution TEM, STEM and EDS. After growing ZnSe or ZnS shell on the …
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Physical and optoelectronic properties of copper silver indium diselenide thin films
… engineering. The effects of alloying Ag with CuInSe2 on the physical properties were shown. The addition of Ag appears to improve the structural quality of the films. This was seen by a reduction in the full-width-at-half-maximum of the luminescence peaks, a reduction in the number of optical …
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How visual representations affect undergraduate students’ use and understanding of engineering concepts during problem solving
… improving the efficiency of solar cells that use CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) as the absorber layer, which are inexpensive but limited due to a variety of defects. Understanding which elements are involved in charge capture and recombination would contribute to the literature by providing …
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Elektronische und chemische Eigenschaften von Grenzflächen und Oberflächen in optimierten Cu(In,Ga)(S,Se)2 Dünnschichtsolarzellen
… ausfällt, als dies aufgrund der im Vergleich zu CuInSe2 größeren Bandlücke zu erwarten wäre. Modelle, die dies auf eine ungünstige Bandanpassung an der CdS/Cu(In,Ga)S2-Grenzfläche zurückführen, konnten in dieser Arbeit durch die Messung der Leitungsbandanpassung, die ein deutlich "Cliff"-artiges …
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Luminescent solar concentrator structures for solar energy harvesting and radiation control
… low-e thin-film coatings and CuInSe2 solar cells, enable most of the visible solar radiation to be transmitted through the glass window with minimum attenuation and the ultraviolet (UV) radiation to be down-converted and routed together with a significant part of infrared …