Deposition of Metal Oxides and Metal Carbonyls on Silicon Surfaces Using Solution Chemistry

The Si-H bonds on the H-Si(111) surface and Co2(CO)8 in n-heptane solution reacted to form a well defined submonolayer coverage of Co(CO)4 above the surface plane of Si(111). Transmission Fourier-transform infrared spectroscopy analysis of (OC) 4Co-Si(111) yielded structural and geometric information about the adsorbate. Accurate quantitative areal concentrations of cobalt deposited on the surface were obtained using Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy analysis furnished the chemical state of the adsorbates as well as quantitative information. Static secondary ion mass spectrometry analysis detected the presence of the desired product and trace amounts of byproducts on the surface. Finally, numerical simulations of irreversible adsorption were used to calculate theoretical yields for comparisons to the experimental coverage values.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Lee, Jason

Contributors dc:contributor

• Klemperer, Walter G.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3044155

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/87883