Residual Stress Development and Effect on the Piezoelectric Performance of Sol -Gel Derived Lead Zirconate Titanate (Pzt) Thin Films

Additionally two patterning methods, traditional chemical wet-etching and a novel soft lithographic technique, are explored as a means to reduce residual stress within film features. For the soft lithographic technique, film features are created by selective film cracking, a result of poor substrate adhesion promoted by a mediated, self-assembled monolayer. Wafer curvature stress measurements and DIC-based strain measurements of mediated monolayer patterned features reveal that the in-plane stress/strain development is reduced compared to the blanket film case. Critical in-plane strains at crack initiation are also measured using a new digital image correlation technique, in which fluorescent nanoparticles (c.a. 140 nm) provide the speckle pattern. A corresponding increase in the field induced displacements is observed for the film features with reduced residual stress. Overall, the piezoelectric performance of the films is highly dependent on the residual stress in the films and can be enhanced significantly by a reduction in this stress through film patterning.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Theoretical and Applied Mechanics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Berfield, Thomas A.

Contributors dc:contributor

• Sottos, Nancy R.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3314731

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/87748