Multi-Scale Transport Phenomena in Low-Pressure Plasmas

To account for the surface effects on the plasma behavior, a mesoscale Monte Carlo simulation has been developed which joins the die-scale surface chemistry with the plasma scale in the HPEM. The presence of etch products in the plasma is seen to perturb the bulk plasma. The presence of photoresist redeposition is seen to have a minor, but important, effect on the etch rate. At low pressure, the etch rate is increased, although the probability of a given ion causing an etch is decreased.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Nuclear Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Grapperhaus, Michael James

Contributors dc:contributor

• Kushner, Mark J.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9834680

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/85937