Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices

A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing parameters with the target and film surface coverage by Ta, TaN and organic sites, from which one can predict the operation mode, either metallic or poison, and the film elemental composition. The organic by-products accounting for the detection of carbon on the substrate by AES analysis and poisoning of the target during the processing are categorized into non-volatile product (OR1) and volatile product (OR2) in a lump-sum assumption. Electron impact, H reducing and ion bombardment are considered as the enhancing mechanisms between the physical and chemical components and included as the reactants of the chemical reactions. Simulation results compare favorably with the experimental data.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Nuclear Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Li, Ning

Contributors dc:contributor

• Ruzic, David N.

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3160915

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/85902