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University of Illinois at Urbana-Champaign

Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp)

Abstract

dc:description

A third project investigated the effect of structure of corrosion inhibitors benzotriazole and 1,2,4-triazole (TAZ) on copper removal rate during CMP. Removal rates were higher for solutions containing TAZ than solutions containing BTA. The corrosion inhibitor films were characterized using AFM, cyclic voltammetry, impedance spectroscopy, surface-enhanced Raman spectroscopy, and mass spectrometry. Inhibitor films formed from TAZ were thicker, more permeable, and rougher than films formed from BTA. The addition of glycine to these solutions showed an increase in corrosion for the TAZ-covered surface, little change to the BTA-covered surface, and an increase in removal for both systems. This study correlated removal rate with the physical properties of these two different corrosion inhibitors.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Chemistry
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Stewart, Karen Lynn
Contributors dc:contributor
  • Gewirth, Andrew A.

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI3337930
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/84321

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Stewart, Karen Lynn. Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp). Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/84321