Characterization of a Keggin Polyoxometalate on Metal and Semiconductor Surfaces

Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemistry

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Teague, Craig Matthew

Contributors dc:contributor

• Gewirth, Andrew A.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3101978

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/84120