{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/84120"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/84120","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Characterization of a Keggin Polyoxometalate on Metal and Semiconductor Surfaces","abstract":"Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.","abstract_html":"Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.","abstract_has_math":false,"creators":["Teague, Craig Matthew"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemistry","degree_department":null,"school":null,"contributors":["Gewirth, Andrew A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T22:13:01Z","date_published":"2015-09-25T22:13:01Z","updated_at":"2026-07-22T22:26:22Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3101978"],"render_values":[{"text":"(MiAaPQ)AAI3101978","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/84120","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Gewirth, Andrew A."]},{"key":"dc:creator","label":"Author","values":["Teague, Craig Matthew"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T22:13:01Z","10000-01-01","2003"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemistry"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/84120","(MiAaPQ)AAI3101978"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.","Made available in DSpace on 2015-09-25T22:13:01Z (GMT). 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In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.","Made available in DSpace on 2015-09-25T22:13:01Z (GMT). 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