Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation

Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&deg;C (fSi,H < 0.003) to --0.09 eV at Ts = 475&deg;C (fSi,H = 0.22).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Taylor, Nerissa Sue

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9971202

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82932