{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82932"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82932","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation","abstract":"Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&deg;C (fSi,H < 0.003) to --0.09 eV at Ts = 475&deg;C (fSi,H = 0.22).","abstract_html":"Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&amp;deg;C (fSi,H &lt; 0.003) to --0.09 eV at Ts = 475&amp;deg;C (fSi,H = 0.22).","abstract_has_math":false,"creators":["Taylor, Nerissa Sue"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:41Z","date_published":"2015-09-25T20:53:41Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9971202"],"render_values":[{"text":"(MiAaPQ)AAI9971202","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82932","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Taylor, Nerissa Sue"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:41Z","10000-01-01","2000"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82932","(MiAaPQ)AAI9971202"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&deg;C (fSi,H < 0.003) to --0.09 eV at Ts = 475&deg;C (fSi,H = 0.22).","Made available in DSpace on 2015-09-25T20:53:41Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971202.pdf: 4625352 bytes, checksum: e74cf3ed0350f0769bda448ab15903d3 (MD5) Previous issue date: 2000","Embargo set by: Seth Robbins for item 84213 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","119 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000."]},{"key":"dc:title","label":"Title","values":["Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Taylor, Nerissa Sue"],"dc:date":["2015-09-25T20:53:41Z","10000-01-01","2000"],"dc:description":["Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&deg;C (fSi,H < 0.003) to --0.09 eV at Ts = 475&deg;C (fSi,H = 0.22).","Made available in DSpace on 2015-09-25T20:53:41Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971202.pdf: 4625352 bytes, checksum: e74cf3ed0350f0769bda448ab15903d3 (MD5) Previous issue date: 2000","Embargo set by: Seth Robbins for item 84213 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","119 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000."],"dc:identifier":["http://hdl.handle.net/2142/82932","(MiAaPQ)AAI9971202"],"dc:language":["eng"],"dc:subject":["Engineering, Materials Science"],"dc:title":["Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:20Z"}