Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon

(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Lin, Chun-Hsiung

Contributors dc:contributor

• Chen, Haydn

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9971121

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82930