{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82930"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82930","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon","abstract":"(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.","abstract_html":"(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.","abstract_has_math":false,"creators":["Lin, Chun-Hsiung"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Chen, Haydn"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:40Z","date_published":"2015-09-25T20:53:40Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9971121"],"render_values":[{"text":"(MiAaPQ)AAI9971121","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82930","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chen, Haydn"]},{"key":"dc:creator","label":"Author","values":["Lin, Chun-Hsiung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:40Z","10000-01-01","2000"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82930","(MiAaPQ)AAI9971121"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["(3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.","Made available in DSpace on 2015-09-25T20:53:40Z (GMT). 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Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated.","Made available in DSpace on 2015-09-25T20:53:40Z (GMT). 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