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University of Illinois at Urbana-Champaign
H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Abstract
dc:descriptionBased on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Kim, Hyungjun
- Contributors dc:contributor
-
- Greene, J.E.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9912289
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82912