{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82912"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82912","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy","abstract":"Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.","abstract_html":"Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.","abstract_has_math":false,"creators":["Kim, Hyungjun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, J.E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:35Z","date_published":"2015-09-25T20:53:35Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9912289"],"render_values":[{"text":"(MiAaPQ)AAI9912289","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82912","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, J.E."]},{"key":"dc:creator","label":"Author","values":["Kim, Hyungjun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:35Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82912","(MiAaPQ)AAI9912289"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.","Made available in DSpace on 2015-09-25T20:53:35Z (GMT). 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Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.","Made available in DSpace on 2015-09-25T20:53:35Z (GMT). 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