Interface Structure Studies of Copper Thin Films on C-Plane Sapphire by Crystal Truncation Rod Analysis Using Synchrotron X-Ray

Thin films were grown by UHV-MBE technique. The substrates underwent two different heat treatments prior to Cu deposition. One substrate was annealed in air at $1500\sp\circ$C for 3 hours followed by an anneal in UHV at $1200\sp\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\sp\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and \rm C\sb6\sb0/α-$\rm Al\sb2O\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chung, Ki-Sup

Contributors dc:contributor

• Chen, Haydn

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9904414

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82905