{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82905"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82905","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Interface Structure Studies of Copper Thin Films on C-Plane Sapphire by Crystal Truncation Rod Analysis Using Synchrotron X-Ray","abstract":"Thin films were grown by UHV-MBE technique. The substrates underwent two different heat treatments prior to Cu deposition. One substrate was annealed in air at $1500\\sp\\circ$C for 3 hours followed by an anneal in UHV at $1200\\sp\\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\\sp\\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and $\\rm C\\sb6\\sb0/\\alpha$-$\\rm Al\\sb2O\\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.","abstract_html":"Thin films were grown by UHV-MBE technique. The substrates underwent two different heat treatments prior to Cu deposition. One substrate was annealed in air at $1500\\sp\\circ$C for 3 hours followed by an anneal in UHV at $1200\\sp\\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\\sp\\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and <span class=\"etd-inline-math\">\\rm C\\sb6\\sb0/&alpha;</span>-$\\rm Al\\sb2O\\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.","abstract_has_math":true,"creators":["Chung, Ki-Sup"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Chen, Haydn"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:34Z","date_published":"2015-09-25T20:53:34Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9904414"],"render_values":[{"text":"(MiAaPQ)AAI9904414","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82905","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chen, Haydn"]},{"key":"dc:creator","label":"Author","values":["Chung, Ki-Sup"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:34Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82905","(MiAaPQ)AAI9904414"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Thin films were grown by UHV-MBE technique. The substrates underwent two different heat treatments prior to Cu deposition. One substrate was annealed in air at $1500\\sp\\circ$C for 3 hours followed by an anneal in UHV at $1200\\sp\\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\\sp\\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and $\\rm C\\sb6\\sb0/\\alpha$-$\\rm Al\\sb2O\\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.","Made available in DSpace on 2015-09-25T20:53:34Z (GMT). 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One substrate was annealed in air at $1500\\sp\\circ$C for 3 hours followed by an anneal in UHV at $1200\\sp\\circ$C for 30 minutes prior to Cu deposition. The other substrate was not subjected to any high-temperature annealing except for an intermediate temperature cleaning treatment at $600\\sp\\circ$C before deposition. The CTR from a clean sapphire substrate without Cu coverage and $\\rm C\\sb6\\sb0/\\alpha$-$\\rm Al\\sb2O\\sb3$ were measured as a reference. The measured data were fitted to the theoretical equation of diffracted crystal truncation rod intensity profile based upon the kinematical approximation. The CTR analysis method provide us the nature of the terminating layer sequence of the substrate, the structural relaxations (interatomic distance change) of the layers near the surface and the interfacial roughness.","Made available in DSpace on 2015-09-25T20:53:34Z (GMT). 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