Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide

The steady state photoconductivity of samples which had been ion implanted with Se and Cr, as well as samples which were contaminated with Na by diffusion, was measured. These measurements were made to determine whether contamination by these elements or severe radiation damage affects minority carrier recombination kinetics. In all cases the photoconductivity was found to be unaffected other than by changes in mobility. (Abstract shortened by UMI.).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Schroeder, David James

Contributors dc:contributor

• Rockett, Angus A.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9812762

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82895