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Showing 1 to 20 of 135 for “"Point Defects"”.

  1. Role of point defects in Perovskite microwave resonators

    … of perovskite compounds containing extrinsic point defects such as vacancies. An empirical approach is used here to develop a predictive model based solely on chemical composition and published ionic radii. Effective vacancy sizes were derived both empirically from an existing model for …

    uiuc Repository record for Role of point defects in Perovskite microwave resonators (opens in a new tab)

  2. Contributions From Point-Defects to the Elastic-Constants of Copper

    Made available in DSpace on 2015-05-12T22:39:08Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7414605.PDF: 3271994 bytes, checksum: 5eed066ef618ab4f123ef8eed73ec0cf (MD5) Previous issue date: 1974

    uiuc Repository record for Contributions From Point-Defects to the Elastic-Constants of Copper (opens in a new tab)

  3. Contributions from point defects to the elastic constants of copper

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-03-02T20:40:27Z No. of bitstreams: 1 1974_rehn.pdf: 3330831 bytes, checksum: 3fda044ab13dcea0117d970b840792e9 (MD5)

    uiuc Repository record for Contributions from point defects to the elastic constants of copper (opens in a new tab)

  4. Elastic Modulus Effect in the Interaction of Point Defects With Dislocation Ribbons

    Made available in DSpace on 2014-12-10T17:57:52Z (GMT). No. of bitstreams: 1 6901445.pdf: 4088954 bytes, checksum: 6fa9bda44e396f3b26236e36f41af3ab (MD5) Previous issue date: 1968

    uiuc Repository record for Elastic Modulus Effect in the Interaction of Point Defects With Dislocation Ribbons (opens in a new tab)

  5. An ultrasonic study of point defects in electron-irradiated P-type silicon

    … of interaction of ultrasonic waves with point defects in crystals are reviewed and a perturbation approach is introduced which leads to general expressions for the resonance and relaxation strengths in terms of matrix elements of the ultrasonic perturbation. These expressions provide the …

    uiuc Repository record for An ultrasonic study of point defects in electron-irradiated P-type silicon (opens in a new tab)

  6. Ultrasonics studies of point defects in iron, aluminum-lithium, and gallium arsenide

    The ultrasonics studies undertaken in this work illustrate the applicability of ultrasonics to a broad variety of problems. In the case of Fe, the objective is to measure the production and annealing of the diaelastic effect of self-interstitials in Fe. Frenkel Pairs created by 2.3 MeV electron …

    uiuc Repository record for Ultrasonics studies of point defects in iron, aluminum-lithium, and gallium arsenide (opens in a new tab)

  7. The uncommon nature of point defects in organic-inorganic Perovskite solar cells

    … organic-inorganic perovskites, the majority of point defects with low formation energy are shallow, with energies within or near the conduction or valence band. Defects with deep states, which act as electronic traps, are expected to be much less common due to their high formation energies. In …

    mit Repository record for The uncommon nature of point defects in organic-inorganic Perovskite solar cells (opens in a new tab)

  8. Point Defects And Defect-Related Transport Of Matter In Transition Metal-Containing Orthosilicates

    Point defects and defect-related transport properties of transition metalcontaining orthosilicates with the olivine structure are interesting topics but are not yet well understood. At high temperatures, the transport properties of sufficiently pure olivines are governed by point defects. To …

    cornell Repository record for Point Defects And Defect-Related Transport Of Matter In Transition Metal-Containing Orthosilicates (opens in a new tab)

  9. Modeling microdefects formation in crystalline silicon : the roles of point defects and oxygen

    … demand for control of size and density of microdefects in the silicon for control of quality and uniformity of the fabricated microelectronic devices. This thesis is aimed at developing a fundamental understanding of the mechanisms for formation of such microdefects through the development of …

    mit Repository record for Modeling microdefects formation in crystalline silicon : the roles of point defects and oxygen (opens in a new tab)

  10. The effect of point defects in copper on the anomalous transmission of X-rays

    … calculated displacements associated with these defects, indicates that the interstitial is not in the split (100) configuration. Possible configurations are the body centered interstitial or the split (111) interstitial. Measurements after annealing at BOoK and 3000K were made. The measurements …

    uiuc Repository record for The effect of point defects in copper on the anomalous transmission of X-rays (opens in a new tab)

  11. Surface chemistry to control bulk reaction dynamics of native point defects in rutile titanium dioxide

    … concentration and spatial distribution of the point and extended defects it contains. For ceramic oxide semiconductor materials, the concentration and diffusion of cations and anions, in the form of interstitials and vacancies, plays a large role in the performance of these materials for gas …

    uiuc Repository record for Surface chemistry to control bulk reaction dynamics of native point defects in rutile titanium dioxide (opens in a new tab)

  12. Analyzing Electronic Correlation Effects in Molecules and Semiconductor Point Defects from First Principles Beyond Density Functional Theory

    Transition-metal based molecules and point defects in wide-bandgap semiconductors have been of particular interest lately due to their potential quantum information science applications. To accurately calculate the electronic properties of these systems from first principles, it is important to …

    vt Repository record for Analyzing Electronic Correlation Effects in Molecules and Semiconductor Point Defects from First Principles Beyond Density Functional Theory (opens in a new tab)

  13. The Thermodynamics of Contrained Systems and the Stability of Solid Phases in the Presence of Excess point Defects

    Made available in DSpace on 2017-07-06T18:48:32Z (GMT). No. of bitstreams: 3 Holloway_James_P_MS.pdf: 79526238 bytes, checksum: 0e68eb4552ccd78d39de6b2df129d60a (MD5) Holloway_James_P_MS_ABS.pdf: 576867 bytes, checksum: 3e94108127ee4aff3a68070ebc3fa888 (MD5) license.txt: 4813 bytes, checksum: …

    uiuc Repository record for The Thermodynamics of Contrained Systems and the Stability of Solid Phases in the Presence of Excess point Defects (opens in a new tab)

  14. Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide

    The steady state photoconductivity of samples which had been ion implanted with Se and Cr, as well as samples which were contaminated with Na by diffusion, was measured. These measurements were made to determine whether contamination by these elements or severe radiation damage affects minority …

    uiuc Repository record for Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide (opens in a new tab)

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