Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition

The deposition apparent activation energy was calculated as 122 $\pm$ 9 kJ/mole using growth rates measured by film height and 117 $\pm$ 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above N$\sb2$ and H$\sb2$ levels of 1.25% and below TiCl$\sb4$ input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$$\rm r = {{kP\sb{TiCl\sb4}P\sb{H\sb2}P\sbsp{N\sb2}{1/2}exp\left({{-}E\sb{a}\over {RT}\right)}\over{1 + P\sb{Ar}}}}.$$Since nitrogen positively affects growth rate (when added to a TiCl$\sb4$+H$\sb2$ mixture), stepwise reduction of TiCl$\sb4$ to Ti by hydrogen does not occur. $\rm NH\sb{x}$ complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiCl$\sb4$ by hydrogen.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Egland, Keith Maynard

Contributors dc:contributor

• Mazumder, Jyotirmoy

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9812578

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82885