In Situ Measurement and Modification of the Interface Potential in Hydrogenated Amorphous Silicon Solar Cells

Atomic H treatment leads to ZnO reduction which enhances the potential barrier at ZnO/p$\sp{+}$ a-Si,C:H interface, and lowers the built-in potential in the p$\sp{+}$ layer. Ozone treated ZnO surface reduces the potential barrier, but depletes the surface conductivity. A treatment of atomic H and ozone on ZnO surface improves the ZnO/p$\sp{+}$ a-Si,C:H interface potential, without sacrificing the conductivity of ZnO. As a result, the interface potential barrier reduces from 0.45 to 0.03 Volt, and the built-in potential in the p$\sp{+}$ layer increases $\approx$20 mV. Insertion of $\sim$25 A unhydrogenated p$\sp{+}$ a-Si,C between ZnO/p$\sp{+}$ a-Si,C:H completely eliminates the interface potential barrier. (Abstract shortened by UMI.).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Nuruddin, Ahmad

Contributors dc:contributor

• Abelson, J.R.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9737208

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82877