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Showing 1 to 20 of 42 for “"hydrogenated amorphous silicon"”.
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Density of gap states in hydrogenated amorphous silicon
<p>Amorphous silicon hydride films have been grown by an improved r.f. sputtering method in a hydrogen-argon atmosphere. Deposition parameters such as substrate temperature, gas flow rate, r.f. power, and argon partial pressure were kept constant, while hydrogen partial pressure was varied. The …
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Physical characteristics of laser processed hydrogenated amorphous silicon
Hydrogenated amorphous silicon films subjected to KrF excimer laser irradiation with a profiled beam in air leads to the formation of microstructures. The main objective of this research was to perform a comprehensive study in understanding this material in three different aspects: thermal, …
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Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon
Made available in DSpace on 2015-09-25T20:03:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921704.pdf: 3532216 bytes, checksum: d6159bd04f372d8389e2b6d995b4b7fe (MD5) Previous issue date: 1999
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Light induced degradation in hydrogenated amorphous silicon (a-Si:H)
… and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical …
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Understanding and improving hole transport in hydrogenated amorphous silicon photovoltaics
While hydrogenated amorphous silicon (a-Si:H) solar cells have been studied extensively for the previous four decades, the low performance of the devices is still not well understood. The poor efficiency (below 10%, even in research-scale devices) is believed to be mainly due to the low hole …
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Carrier mobility of downscaled amorphous semiconductors exemplified by hydrogenated amorphous silicon
… Internet of Things (IoT) facilities. Amorphous semiconductors are among the most favoured channel semiconductors in TFTs because of their irreplaceable merits such as large-area uniformity, low cost and low thermal budget which are essential to the above use cases. Nevertheless, the …
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Microstructure and residual stress in hydrogenated amorphous silicon (a-Si:H) layers
Hydrogenated amorphous silicon (a-Si:H) is known to be highly disordered. The disorder introduces a high amount of defects in the network, such as bond length and angle deviation, non-coordinated bonds or voids. In this work the microstructural characterization and a new approach for strain …
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Kinetic Roughening During Hot-Wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical …
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Origins and implications of intrinsic stress in hydrogenated amorphous silicon thin films
Despite decades of research on hydrogenated amorphous silicon (a-Si:H), there remains much to be understood about the relationship between deposition conditions and the resulting structural, optical, and bulk properties of the material. In this work we investigate these correlations for a-Si:H …
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Microstructure, stress and defect evolution under illumination in hydrogenated amorphous silicon (a-Si:H)
… stress and hydrogen distribution in as deposited hydrogenated amorphous silicon (a-Si:H) layers, and secondly the investigation of the influence of illumination on hydrogen evolution and its relationship with the strain in illuminated layers.
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Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates
Hydrogenated amorphous silicon (a-Si:H) is an important thin film semiconductor with a wide variety of applications in microelectronics and optoelectronics. However, it is metastable and photodegrades after a moderate light illumination (Staebler-Wronski effect). The most stable material has been …
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Low temperature (<150 °C) hydrogenated amorphous silicon grown by PECVD with source gas heating
Hydrogenated amorphous silicon (a-Si:H) is a semiconductor that is widely used in a variety of applications. A particularly important development has been the incorporation of this material into thin film transistor (TFT) arrays for the active matrix addressing of liquid crystal displays. Plasma …
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Growth and properties of hydrogenated amorphous silicon carbon alloys by DC reactive magnetron sputtering
We deposited amorphous hydrogenated silicon-carbon (a-Si$\rm\sb{1-x}C\sb{x}$:H) alloy films by dc reactive magnetron sputtering (RMS) of a silicon target in a plasma of (Ar + H$\rm\sb2$ + CH$\sb4).$ Films with optical bandgaps of 1.8-2.0 eV and x $\le$ 0.2 have a compact microstructure; no …
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In Situ Measurement and Modification of the Interface Potential in Hydrogenated Amorphous Silicon Solar Cells
… $\approx$20 mV. Insertion of $\sim$25 A unhydrogenated p$\sp{+}$ a-Si,C between ZnO/p$\sp{+}$ a-Si,C:H completely eliminates the interface potential barrier. (Abstract shortened by UMI.).
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Growth, properties and electronic stability of DC magnetron reactive sputtered hydrogenated amorphous silicon thin films
Restriction data tranferred 2014-07-01T11:15:22-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission
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