Stress Induced Deformations of Thin Silicon Dioxide Films

The behavior of compressive silicon dioxide films deposited by magnetron sputtering, on PMMA, a low Tg polymer, were also studied. SiO2 films exhibited a linear increase in the surface roughness for deposited thickness below ∼10 nm; larger thickness showed an almost unchanged roughness. Since stresses generated in thin films during sputtering are independent of surface morphology, the roughening of the films is treated as a stress-driven roughening mechanism, where the compressive stress in the films causes buckling of the films during growth.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Serrano, Justin Raymond

Contributors dc:contributor

• Cahill, David G.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3160952

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82758