Stress Induced Deformations of Thin Silicon Dioxide Films
The behavior of compressive silicon dioxide films deposited by magnetron sputtering, on PMMA, a low Tg polymer, were also studied. SiO2 films exhibited a linear increase in the surface roughness for deposited thickness below ∼10 nm; larger thickness showed an almost unchanged roughness. Since stresses generated in thin films during sputtering are independent of surface morphology, the roughening of the films is treated as a stress-driven roughening mechanism, where the compressive stress in the films causes buckling of the films during growth.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign