Stress Induced Deformations of Thin Silicon Dioxide Films
type: CreativeWork
description: The behavior of compressive silicon dioxide films deposited by magnetron sputtering, on PMMA, a low Tg polymer, were also studied. SiO2 films exhibited a linear increase in the surface roughness for deposited thickness below ∼10 nm; larger thickness showed an almost unchanged roughness. Since stresses generated in thin films during sputtering are independent of surface morphology, the roughening of the films is treated as a stress-driven roughening mechanism, where the compressive stress in the films causes buckling of the films during growth.
abstract: The behavior of compressive silicon dioxide films deposited by magnetron sputtering, on PMMA, a low Tg polymer, were also studied. SiO2 films exhibited a linear increase in the surface roughness for deposited thickness below ∼10 nm; larger thickness showed an almost unchanged roughness. Since stresses generated in thin films during sputtering are independent of surface morphology, the roughening of the films is treated as a stress-driven roughening mechanism, where the compressive stress in the films causes buckling of the films during growth.
author: Serrano, Justin Raymond
language: eng
keywords: Engineering, Materials Science
date published: 2015-09-25T20:52:54Z
date modified: 2026-07-22T22:26:18Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/82758