Reaction Path and Crystallograpy of Cobalt Silicide Formation on Silicon(001) by Reaction Deposition Epitaxy

I show that high-flux low-energy Ar+ ion irradiation during RDE growth dramatically increases the area fraction of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio JAr+/JCo of the incident Ar> to Co fluxes is 1.4 to 0.72 with JAr+/JCo= 13.3. TEM analyses reveal that increasing JAr+/J Co results in larger values of both the number density and area of untwinned islands. The intense Ar+ ion bombardment under high-ion-flux conditions creates additional low-energy adsorption sites that favor the nucleation of untwinned islands and collisionally enhances the Co adatom surface mobility which, in turn, increases the probability of itinerant Co adatoms reaching these sites.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Lim, Chong Wee

Contributors dc:contributor

• Greene, Joseph E.

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI3160917

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82757