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University of Illinois at Urbana-Champaign
Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology
Abstract
dc:descriptionFinally, the feasibility of using the combination of low-temperature grown amorphous alpha-(Ga, As) materials and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Shi, Fang Frank
- Contributors dc:contributor
-
- Hsieh, Kuang-Chien
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3153427
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82755